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  Datasheet File OCR Text:
 NTE2302
Silicon NPN Transistor Color TV Horizontal Deflection Output w/Damper Diode
Features: D High Breakdown Voltage and High Reliability D High Switching Speed D Capable of Being Mounted in a Variety of Methods Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Collector Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current Gain-Bandwidth Product Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Diode Forward Voltage Fall Time Symbol ICBO IEBO hFE fT VCE(sat) VBE(sat) Test Conditions VCB = 800V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 1A VCE = 10V, IC = 1A IC = 4A, IB = 0.8A IC = 4A, IB = 0.8A Min - 40 8 - - - 1500 800 7 - - Typ - - - 3 - - - - - - - Max 10 130 - - 5.0 1.5 - - - 2 0.7 MHz V V V V V V s Unit A mA
V(BR)CBO IC = 5mA, IE = 0 V(BR)CBO IC = 100mA, RBE = V(BR)EBO IE = 200mA, IC = 0 VF tf IEC = 5A VCC = 200V, IC = 4A, IB1 = 0.8A, IB2 = -1.6A, RL = 50
.190 (4.82)
.615 (15.62)
C
.787 (20.0) .591 (15.02) .126 (3.22) Dia
.787 (20.0)
B
C
E
.215 (5.47)


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